Polar Power MOSFET

Polar Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Features • Plastic Overmolded Tab for Electrical Isolation • International Standard Package • Low RDS(on) and QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • H

N-Channel: Standard Power MOSFETs

isc N-Channel MOSFET Transistor

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POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

Fast Switching

• FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply.

isc N-Channel MOSFET Transistor

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18A,600V N-CHANNEL POWER MOSFET

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600V N-CHANNEL POWER MOSFET

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