PolarPowerMOSFET

PolarPowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features •PlasticOvermoldedTabforElectricalIsolation •InternationalStandardPackage •LowRDS(on)andQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •H

iscN-ChannelMOSFETTransistor

文件：294.99 Kbytes Page：2 Pages

POLARHVHIPERFETPOWERMOSFET

DESCRIPTION TheUTC18N60usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)≤0.5Ω@VGS=10V,ID=9A *Ul

FastSwitching

•FEATURES •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

iscN-ChannelMOSFETTransistor

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18A,600VN-CHANNELPOWERMOSFET

文件：147.67 Kbytes Page：3 Pages

600VN-CHANNELPOWERMOSFET

文件：147.42 Kbytes Page：3 Pages