位置：首页 > IC中文资料第10897页 > 18N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
18N60 | POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul | UTC 友顺 |   | |
18N60 | Fast Switching • FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply. | ISC 无锡固电 | | |
18N60 | isc N-Channel MOSFET Transistor 文件：325.33 Kbytes Page：2 Pages | ISC 无锡固电 | | |
18N60 | 600V N-CHANNEL POWER MOSFET 文件：147.42 Kbytes Page：3 Pages | UTC 友顺 | | |
18N60 | 18A,600V N-CHANNEL POWER MOSFET 文件：147.67 Kbytes Page：3 Pages | UTC 友顺 | | |
18N60 | 18A,600V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul | UTC 友顺 | | ||
POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul | UTC 友顺 | | ||
N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device | STMICROELECTRONICS 意法半导体 | | ||
POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul | UTC 友顺 | | ||
600V N-CHANNEL POWER MOSFET 文件：147.42 Kbytes Page：3 Pages | UTC 友顺 | | ||
18A,600V N-CHANNEL POWER MOSFET 文件：147.67 Kbytes Page：3 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：186.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：325.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-CHANNEL POWER MOSFET 文件：186.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：186.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
18A,600V N-CHANNEL POWER MOSFET 文件：147.67 Kbytes Page：3 Pages | UTC 友顺 | | ||
600V N-CHANNEL POWER MOSFET 文件：147.42 Kbytes Page：3 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：186.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：186.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
600V N-CHANNEL POWER MOSFET 文件：147.42 Kbytes Page：3 Pages | UTC 友顺 | | ||
18A,600V N-CHANNEL POWER MOSFET 文件：147.67 Kbytes Page：3 Pages | UTC 友顺 | | ||
Planar Power MOSFET (N-CH) | UTC 友顺 | | ||
高压MOSFET | ETC 知名厂家 | ETC | |
18N60产品属性
- 类型
描述
- 型号
18N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
600V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
22+ |
TO-220F-3L |
150000 |
挂的就有,常备现货 |
|||
ST |
23+ |
TO-247TO-3P |
16900 |
正规渠道,只有原装! |
|||
UTC/友顺 |
24+ |
NA |
8000 |
只做原装，欢迎询价，量大价优 |
|||
INMET |
2023+ |
N(F/F) |
25 |
weinschel 衰减器库存大量现货,欢迎电寻 |
|||
UTC/友顺 |
24+ |
TO-220F1 |
50000 |
全新原装,一手货源,全场热卖! |
|||
UTC |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
|||
ST/意法 |
23+ |
DFN-85x6 |
6000 |
专注配单,只做原装进口现货 |
|||
INFINEON |
23+ |
TO-220 |
7000 |
||||
UTC/友顺 |
23+ |
TO247 |
509999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
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2020-4-15
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