型号 功能描述 生产厂家 企业 LOGO 操作
18N60

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

UTC

友顺

18N60

Fast Switching

• FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply.

ISC

无锡固电

18N60

isc N-Channel MOSFET Transistor

文件:325.33 Kbytes Page:2 Pages

ISC

无锡固电

18N60

600V N-CHANNEL POWER MOSFET

文件:147.42 Kbytes Page:3 Pages

UTC

友顺

18N60

18A,600V N-CHANNEL POWER MOSFET

文件:147.67 Kbytes Page:3 Pages

UTC

友顺

18N60

18A,600V N-CHANNEL POWER MOSFET

UTC

友顺

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

UTC

友顺

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

UTC

友顺

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

STMICROELECTRONICS

意法半导体

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

UTC

友顺

600V N-CHANNEL POWER MOSFET

文件:147.42 Kbytes Page:3 Pages

UTC

友顺

18A,600V N-CHANNEL POWER MOSFET

文件:147.67 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:186.47 Kbytes Page:4 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件:325.33 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET

文件:186.47 Kbytes Page:4 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:186.47 Kbytes Page:4 Pages

UTC

友顺

18A,600V N-CHANNEL POWER MOSFET

文件:147.67 Kbytes Page:3 Pages

UTC

友顺

600V N-CHANNEL POWER MOSFET

文件:147.42 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:186.47 Kbytes Page:4 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:186.47 Kbytes Page:4 Pages

UTC

友顺

600V N-CHANNEL POWER MOSFET

文件:147.42 Kbytes Page:3 Pages

UTC

友顺

18A,600V N-CHANNEL POWER MOSFET

文件:147.67 Kbytes Page:3 Pages

UTC

友顺

Planar Power MOSFET  (N-CH)

UTC

友顺

高压MOSFET

ETC

知名厂家

18N60产品属性

  • 类型

    描述

  • 型号

    18N60

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    600V N-CHANNEL POWER MOSFET

更新时间:2025-12-18 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OSEN/欧芯
24+
TO-220FTO-220
60000
UTC/友顺
24+
TO-220F1
50000
全新原装,一手货源,全场热卖!
ST
2511
TO-220
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
SANYO/三洋
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
ST
25+
TO-247TO-3P
16900
原装,请咨询
UTC/友顺
23+
TO247
509999
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST
23+
TO-247TO-3P
16900
正规渠道,只有原装!
SILAN/士兰微
22+
TO-220F-3L
150000
挂的就有,常备现货
ST/意法
23+
DFN-85x6
6000
专注配单,只做原装进口现货
ST
23+/24+
TO-247
29880
原装MOS管(场效应管).

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