N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High Speed Power Switching Applications

N通道线性MOSFET

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

LinearL2™ Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features • Designed for Linear Operation • International Standard Packages • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density A

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PL package • Low input capacitance and gate charge • High speed switching • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch •

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

LinearL2™ Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features • Designed for Linear Operation • International Standard Packages • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density A

Isc N-Channel MOSFET Transistor

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