型号 功能描述 生产厂家 企业 LOGO 操作

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

N-Channel Enhancement Mode MOSFET

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DACO

罡境电子

更新时间:2026-1-2 11:12:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
24+
TO247
80000
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23+
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TO247
8000
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2447
TO-3P
100500
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IXYS/艾赛斯
23+
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50000
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22+
TO2473
9000
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21+
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24+
TO-3P
5000
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20+
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36900
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24+
TO247
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