型号 功能描述 生产厂家 企业 LOGO 操作
IXFM35N30

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM35N30

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

IXFM35N30

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

无锡固电

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

N-Channel Enhancement Mode MOSFET

文件:251.32 Kbytes Page:4 Pages

DACO

罡境电子

IXFM35N30产品属性

  • 类型

    描述

  • 型号

    IXFM35N30

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFET Power MOSFETs

更新时间:2025-10-17 16:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXS
25+
SOP
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IXYS
原厂封装
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IXYS
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24+
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IXYS/艾赛斯
专业铁帽
TO-3
50
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23+
TO-204
10000
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0425
6
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24+
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66800
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3647
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IXYS
23+
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64196
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