位置:首页 > IC中文资料 > IXTA7N60P

IXTA7N60P价格

参考价格:¥6.6362

型号:IXTA7N60P 品牌:IXYS 备注:这里有IXTA7N60P多少钱,2026年最近7天走势,今日出价,今日竞价,IXTA7N60P批发/采购报价,IXTA7N60P行情走势销售排行榜,IXTA7N60P报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXTA7N60P

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

LITTELFUSE

力特

IXTA7N60P

丝印代码:D2PAK;isc N-Channel MOSFET Transistor

文件:299.87 Kbytes Page:2 Pages

ISC

无锡固电

IXTA7N60P

N-Channel Enhancement Mode Avalanche Rated

文件:764.86 Kbytes Page:4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Avanlanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings Appli

IXYS

艾赛斯

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied

PHILIPS

飞利浦

IXTA7N60P产品属性

  • 类型

    描述

  • Package Style:

    TO-263

更新时间:2026-8-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS(艾赛斯)
25+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
22+
SOP8
5000
全新原装现货!价格优惠!可长期
IXYS
24+
TO-263
96
IXY
23+
SOP8
7000
IXYS
24+
SMD
5500
长期供应原装现货实单可谈
原装正品
23+
TO-263
70825
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS/艾赛斯
2022+
TO-263
50000
原厂代理 终端免费提供样品
IXYS
24+
con
10000
查现货到京北通宇商城
IXYS/艾赛斯
23+
SOP8
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

IXTA7N60P数据表相关新闻

  • IXTH60N20X4

    IXTH60N20X4

    2022-8-31
  • IXTH60N20X4

    IXTH60N20X4

    2022-8-11
  • IXTT16N10D2

    IXTT16N10D2

    2022-6-9
  • IXOLAR?高效25%SolarMD模块SM111K04L

    IXYS / Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电

    2019-9-17
  • IXTA3N120承诺百分之百原装

    瀚佳科技: 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。

    2018-12-28
  • IXPD610-工业控制IC

    IXDP610数字脉宽调制器(DPWM)是一个可编程CMOS LSI器件接收数字从一个微处理器的脉冲宽度数据并生成两个相辅相成的,非重叠,脉冲宽度调制直接数字控制信号开关电源的桥梁。 DPWM是根据操作直接控制的微处理器和与大多数标准的接口,轻松微处理器和微型计算机巴士。 IXDP610封装在18引脚超薄的DP。所产生的PWM波形IXDP610从比较的结果输出的脉冲宽度计数器在脉冲宽度存储的电话号码锁存(见下文)。一个可编程“死时间”已被纳入PWM波形。死区时间逻辑禁用在每两个输出比较器输出的过渡所需的死区时间间隔。输出级提供互补PWM输出信号的能力下沉和采购20毫安的TTL电压水平。输出禁用

    2012-11-29