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IXTA7N60P价格
参考价格：￥6.6362
型号：IXTA7N60P 品牌：IXYS 备注：这里有IXTA7N60P多少钱，2024年最近7天走势，今日出价，今日竞价，IXTA7N60P批发/采购报价，IXTA7N60P行情走势销售排行榜，IXTA7N60P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTA7N60P | iscN-ChannelMOSFETTransistor 文件：299.87 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IXTA7N60P | N-ChannelEnhancementModeAvalancheRated 文件：764.86 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division |  | |
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Plasticovermoldedtabforelectrical isolation •Internationalstandardpackage •Avanlancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings Appli | IXYS IXYS Integrated Circuits Division | | | |
7.4Amps,600VoltsN-CHANNELMOSFET ■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
iscN-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
7Amps竊?00VoltsN-ChannelMOSFET ■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
7A600VN-channelEnhancementModePowerMOSFET 文件：898.89 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
IXTA7N60P产品属性
- 类型
描述
- 型号
IXTA7N60P
- 功能描述
MOSFET 7 Amps 600V 1.1 Ohms Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
|||
IXYS/艾赛斯 |
23+ |
NA/ |
1700 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
原装正品 |
23+ |
TO-263 |
70825 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
23+ |
TO-263 |
9500 |
专业优势供应 |
|||
IXYS/艾赛斯 |
TO-263 |
265209 |
假一罚十原包原标签常备现货! |
||||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IXYS |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS |
07+/08+ |
TO-263 |
96 |
IXTA7N60P芯片相关品牌
IXTA7N60P规格书下载地址
IXTA7N60P参数引脚图相关
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IXTA7N60P数据表相关新闻
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2018-12-28IXPD610-工业控制IC
IXDP610数字脉宽调制器（DPWM）是一个可编程CMOSLSI器件接收数字从一个微处理器的脉冲宽度数据并生成两个相辅相成的，非重叠，脉冲宽度调制直接数字控制信号开关电源的桥梁。DPWM是根据操作直接控制的微处理器和与大多数标准的接口，轻松微处理器和微型计算机巴士。IXDP610封装在18引脚超薄的DP。所产生的PWM波形IXDP610从比较的结果输出的脉冲宽度计数器在脉冲宽度存储的电话号码锁存（见下文）。一个可编程“死时间”已被纳入PWM波形。死区时间逻辑禁用在每两个输出比较器输出的过渡所需的死区时间间隔。输出级提供互补PWM输出信号的能力下沉和采购20毫安的TTL电压水平。输出禁用
2012-11-29
DdatasheetPDF页码索引
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