High Voltage MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Features • International standard packages • High voltage, Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Flyb

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：299.15 Kbytes Page：2 Pages

Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：315.15 Kbytes Page：2 Pages

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

TMOS POWER FET 1.0 AMPERES 1000 VOLTS

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on)= 9.0 OHM The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilit

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi