High Voltage MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Features • International standard packages • High voltage, Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Flyb

isc N-Channel MOSFET Transistor

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N通道标准MOSFET

Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

Isc N-Channel MOSFET Transistor

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N通道标准 Polar™ MOSFET

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold