HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 48A 150W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated PT IGBTs

HiPerFASTTM IGBT with Diode

Features • International standard package JEDEC TO-247 AD • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast RecoveryEpitaxial Diode (FRED) - so

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 48A 150W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated PT IGBTs

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode MOSFET

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N-Channel Power MOSFET

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