CoolMOS Power MOSFET in ISOPLUS220 Package

CoolMOS™ Power MOSFET in ISOPLUS220™ Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation •

isc N-Channel MOSFET Transistor

• FEATURES • High power dissipation • Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Switching Applications

N通道超级结MOSFET

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

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20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages