Lightspeed 2TM Series (Electrically Isolated Back Surface)

Features • DCB Isolated mounting tab • Meets TO-247AD package Outline • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode p

Lightspeed 2TM Series (Electrically Isolated Back Surface)

Features • DCB Isolated mounting tab • Meets TO-247AD package Outline • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode p

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

High Speed PT IGBT for 40-100kHz Switching Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Optimized for Low Switching Losses • Square RBSOA • Isolated Mounting Surface • Anti-Parallel Ultra Fast Diode • High Speed Silicon Carbide Schottky Co-Pack Diode - No Reve

LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface)

Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collector to tab capacitance (

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

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B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

文件：514.169 Kbytes Page：6 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 250W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 250W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Speed PT IGBT for 40-100 kHz Switching

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HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Super Junction MOSFET

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