High Speed PT IGBT for 40-100kHz Switching

Features

• Silicon Chip on Direct-Copper Bond

(DCB) Substrate

• Optimized for Low Switching Losses

• Square RBSOA

• Isolated Mounting Surface

• Anti-Parallel Ultra Fast Diode

• High Speed Silicon Carbide Schottky

Co-Pack Diode

- No Reverse Recovery

• 2500V Electrical Isolation

• Avalanche Rated

Advantages

• High Power Density

• Low Gate Drive Requirement

Applications

• High Frequency Power Inverters

• UPS

• Motor Drives

• SMPS

• PFC Circuits

• Battery Chargers

• Welding Machines

• Lamp Ballasts