Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low collector to tab capacitance (<25pF)

• Rugged polysilicon gate cell structure

• Fast intrinsic Rectifier

• Low VCE(sat)IGBT and standard diode

for minimum on-state conduction

losses

• MOS Gate turn-on for drive simplicity

Applications

• Solid state relays

• Capacitor discharge circuits

• High power ignition circuits

Advantages

• Space savings (two devices in one package)

• Reduces assembly time and cost

• High power density