HiPerFASTIGBTLightspeedSeries

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封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 48A 150W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High-GainIGBTs

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High-SpeedPTTrenchIGBT

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封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 56A 190W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.185Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-ChannelEnhancementModeMOSFET

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N-ChannelPowerMOSFET

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