HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOS™ process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOS™ process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 48A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFAST IGBT with Diode

Features • High frequency IGBT and antiparallel FRED in one package • High current handling capability • 3rd generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power suppli

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 48A 150W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode MOSFET

文件：281.56 Kbytes Page：4 Pages

N-Channel Power MOSFET

文件：2.88047 Mbytes Page：6 Pages