IXGH16N170A价格

参考价格:¥38.4199

型号:IXGH16N170A 品牌:Ixys 备注:这里有IXGH16N170A多少钱,2026年最近7天走势,今日出价,今日竞价,IXGH16N170A批发/采购报价,IXGH16N170A行情走势销售排行榜,IXGH16N170A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXGH16N170A

High Voltage IGBT

Features • High blocking voltage • High current handling capability • MOS Gate turn-on - drive simplicity • Rugged NPT structure • Molding epoxies meet UL 94 V-0 flammability classification • SONIC-FRDTM fast recovery copack diode • International standard packages JEDEC TO-268 and JEDEC TO-

IXYS

艾赛斯

IXGH16N170A

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1700V 16A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

IXGH16N170A

NPT 高电压IGBT

Littelfuse

力特

High Voltage IGBT

Features • High blocking voltage • High current handling capability • MOS Gate turn-on - drive simplicity • Rugged NPT structure • Molding epoxies meet UL 94 V-0 flammability classification • SONIC-FRDTM fast recovery copack diode • International standard packages JEDEC TO-268 and JEDEC TO-

IXYS

艾赛斯

High Voltage IGBT

文件:176.26 Kbytes Page:6 Pages

IXYS

艾赛斯

High Voltage IGBT

文件:176.26 Kbytes Page:6 Pages

IXYS

艾赛斯

NPT 高电压IGBT

Littelfuse

力特

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1700V 16A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

IXYS

艾赛斯

IXGH16N170A产品属性

  • 类型

    描述

  • 型号

    IXGH16N170A

  • 功能描述

    IGBT 晶体管 32 Amps 1700 V 5 V Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-2 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
24+
NA/
1888
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS
24+
TO-247
8866
IXYS
23+
TO3P
8000
只做原装现货
IXYS
23+
TO3P
7000
IXYS(艾赛斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IXYS/艾赛斯
24+
TO3P
60000
全新原装现货
IXYS
24+
原厂封装
5000
原装现货假一罚十
IXYS
1430+
TO-247
5800
全新原装,公司大量现货供应,绝对正品
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS/艾赛斯
23+
TO3P
50000
全新原装正品现货,支持订货

IXGH16N170A数据表相关新闻