IXGH16N170A价格

参考价格:¥38.4199

型号:IXGH16N170A 品牌:Ixys 备注:这里有IXGH16N170A多少钱,2024年最近7天走势,今日出价,今日竞价,IXGH16N170A批发/采购报价,IXGH16N170A行情走势销售排行榜,IXGH16N170A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXGH16N170A

HighVoltageIGBT

Features •Highblockingvoltage •Highcurrenthandlingcapability •MOSGateturn-on-drivesimplicity •RuggedNPTstructure •MoldingepoxiesmeetUL94V-0flammabilityclassification •SONIC-FRDTMfastrecoverycopackdiode •InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Integrated Circuits Division

IXYS
IXGH16N170A

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1700V 16A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltageIGBT

Features •Highblockingvoltage •Highcurrenthandlingcapability •MOSGateturn-on-drivesimplicity •RuggedNPTstructure •MoldingepoxiesmeetUL94V-0flammabilityclassification •SONIC-FRDTMfastrecoverycopackdiode •InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltageIGBT

文件:176.26 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltageIGBT

文件:176.26 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1700V 16A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features •HighVoltagePackage •HighBlockingVoltage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDensity Applications: •Switch-ModeandResonant-ModePowerSupplies •UninterruptiblePowerSupplies(UPS) •LaserGenerators •Ca

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications •ACmotorspeedcontrol •Uninter

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features •Monolithicfastreversediode •HighBlockingVoltage •JEDECTO-268surfacemountandJEDECTO-247ADpackages •Lowswitchinglosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications •ACmotorspeedcontrol •Uninter

IXYS

IXYS Integrated Circuits Division

IXYS

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features •Monolithicfastreversediode •HighBlockingVoltage •JEDECTO-268surfacemountandJEDECTO-247ADpackages •Lowswitchinglosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Integrated Circuits Division

IXYS

IXGH16N170A产品属性

  • 类型

    描述

  • 型号

    IXGH16N170A

  • 功能描述

    IGBT 晶体管 32 Amps 1700 V 5 V Rds

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-5-16 19:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
1430+
TO-247
5800
全新原装,公司大量现货供应,绝对正品
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
23+
TO-247
3000
全新原装
IXYS/艾赛斯
23+
TO-247
6000
原装正品,支持实单
IXYS
21+
TO247AD (IXGH)
13880
公司只售原装,支持实单
IXYS/艾赛斯
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
IXYS/艾赛斯
23+
NA/
1888
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS/艾赛斯
TO3P
265209
假一罚十原包原标签常备现货!
IXYS-艾赛斯
24+25+/26+27+
TO-247-3
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS
18+
TO-247
2050
公司大量全新原装 正品 随时可以发货

IXGH16N170A芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

IXGH16N170A数据表相关新闻