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IXBT16N170价格
参考价格：￥50.9396
型号：IXBT16N170A 品牌：IXYS 备注：这里有IXBT16N170多少钱，2026年最近7天走势，今日出价，今日竞价，IXBT16N170批发/采购报价，IXBT16N170行情走势销售排行榜，IXBT16N170报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBT16N170 | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter | IXYS 艾赛斯 |   | |
IXBT16N170 | BiMOSFET™ 高电压 | Littelfuse 力特 | | |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca | IXYS 艾赛斯 | | ||
封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 1700V 16A 150W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | ||
BiMOSFET™ 高电压 | Littelfuse 力特 | | ||
BiMOSFET™ 高电压 | Littelfuse 力特 | | ||
封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：托盘 描述：IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl | IXYS 艾赛斯 | |
IXBT16N170产品属性
- 类型
描述
- 型号
IXBT16N170
- 功能描述
IGBT 晶体管 1700V 16A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/LITTELFUSE |
2008 |
TO-268 |
15800 |
全新原装正品现货直销 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
21+ |
TO-268 |
10000 |
原装现货假一罚十 |
|||
IXYS |
24+ |
TO-268 |
8866 |
||||
Littelfuse/IXYS |
23+ |
TO-268HV |
450 |
三极管/MOS管/晶体管 > IGBT管/模块 |
|||
IXYS |
23+ |
TO-268 |
7000 |
IXBT16N170规格书下载地址
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DdatasheetPDF页码索引
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