IXBT16N170A价格

参考价格:¥50.9396

型号:IXBT16N170A 品牌:IXYS 备注:这里有IXBT16N170A多少钱,2025年最近7天走势,今日出价,今日竞价,IXBT16N170A批发/采购报价,IXBT16N170A行情走势销售排行榜,IXBT16N170A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXBT16N170A

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

IXYS

艾赛斯

IXBT16N170A

封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:管件 描述:IGBT 1700V 16A 150W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca

IXYS

艾赛斯

封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:托盘 描述:IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Voltage Package • High Blocking Voltage • Anti-Parallel Diode • Low Conduction Losses Advantages • Low Gate Drive Requirement • High Power Density Applications: • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • Laser Generators • Ca

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • High Blocking Voltage • JEDEC TO-268 surface and JEDEC TO-247 AD • Low conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninter

IXYS

艾赛斯

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL94V-0 flammability classification Appl

IXYS

艾赛斯

IXBT16N170A产品属性

  • 类型

    描述

  • 型号

    IXBT16N170A

  • 功能描述

    IGBT 晶体管 1700V 16A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-16 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
24+
TO-268
8866
IXYS/LITTELFUSE
2109
TO-268
15800
全新原装正品现货直销
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
22+
TO268
9000
原厂渠道,现货配单
Littelfuse/IXYS
23+
TO-268HV
450
三极管/MOS管/晶体管 > IGBT管/模块
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
IXYS
25+
TO-268-3 D?Pak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IXYS
23+
TO268
9000
原装正品,支持实单
IXYS
1809+
TO-268
326
就找我吧!--邀您体验愉快问购元件!

IXBT16N170A数据表相关新闻

  • IXDD609YI

    IXDD609YI

    2023-10-12
  • IXBK75N170

    IXBK75N170

    2022-11-24
  • IXBH2N250

    IXBH2N250

    2022-11-24
  • IXDD604SIATR

    IXDD604SIATR

    2022-5-27
  • IXDD614YI

    IXDD614YI,全新原装当天发货或门市自取0755-82732291.

    2020-6-16
  • IX9915N

    具有350 V达林顿晶体管的低压误差放大器– IX9915系列 IXYS集成电路在具有350 V达林顿晶体管的误差放大器中提供多功能产品设计

    2020-4-10