IXFX64N60价格

参考价格:¥63.3535

型号:IXFX64N60P 品牌:IXYS 备注:这里有IXFX64N60多少钱,2026年最近7天走势,今日出价,今日竞价,IXFX64N60批发/采购报价,IXFX64N60行情走势销售排行榜,IXFX64N60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXFX64N60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=64A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =96mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

ISC

无锡固电

PolarHVTM HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features) ● International standard packages ● Fast recovery diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =100mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 95mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

ISC

无锡固电

N通道HiPerFET MOSFET

Littelfuse

力特

N通道HiPerFET MOSFET

Littelfuse

力特

N通道HiPerFET

Littelfuse

力特

HiperFET Power MOSFETs Q3-Class

文件:132.96 Kbytes Page:5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件:132.96 Kbytes Page:5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features) ● International standard packages ● Fast recovery diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged p

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

文件:157.56 Kbytes Page:5 Pages

IXYS

艾赛斯

Power MOSFET

文件:157.11 Kbytes Page:6 Pages

IXYS

艾赛斯

IXFX64N60产品属性

  • 类型

    描述

  • 型号

    IXFX64N60

  • 功能描述

    MOSFET MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
IXYS
22+
TO2473
9000
原厂渠道,现货配单
IXYS/艾赛斯
16+
TO-247
1500
IXYS
22+
TO-247
20000
公司只做原装 品质保障
IXYS/艾赛斯
23+
PLUS247
13500
原厂授权一级代理,专业海外优势订货,价格优势、品种
IXYS(艾赛斯)
24+
TO-247-3
8135
原厂可订货,技术支持,直接渠道。可签保供合同
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
IXYS/艾赛斯
25+
TO-247
32000
IXYS/艾赛斯全新特价IXFX64N60P3即刻询购立享优惠#长期有货
IXYS
1215+
TO-247
150000
全新原装,绝对正品,公司大量现货供应.
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售

IXFX64N60数据表相关新闻