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IXFK64N60价格
参考价格：￥62.6686
型号：IXFK64N60P 品牌：IXYS 备注：这里有IXFK64N60多少钱，2025年最近7天走势，今日出价，今日竞价，IXFK64N60批发/采购报价，IXFK64N60行情走势销售排行榜，IXFK64N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFK64N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 |   | |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features) ● International standard packages ● Fast recovery diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 95mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 文件：132.96 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
PolarHV HiPerFET Power MOSFET PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged p | IXYS 艾赛斯 | | ||
PolarHV HiPerFET Power MOSFET 文件：157.56 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
Power MOSFET 文件：157.11 Kbytes Page：6 Pages | IXYS 艾赛斯 | |
IXFK64N60产品属性
- 类型
描述
- 型号
IXFK64N60
- 功能描述
MOSFET 600V 64A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
22+23+ |
TO-264-3 |
8000 |
新到现货，只做原装进口 |
|||
IXYS/艾赛斯 |
21+ |
TO264 |
10000 |
原装现货假一罚十 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
23+ |
TO-264 |
11863 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Littelfuse/IXYS |
24+ |
TO-264-3 |
7810 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IXYS |
23+ |
TO-3PL |
63831 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
IXYS |
24+ |
TO-264 |
8866 |
||||
IXYS/LITTELFUSE |
1946 |
TO-264 |
15800 |
全新原装正品现货直销 |
|||
IXYS |
23+ |
TO-264 |
7000 |
IXFK64N60规格书下载地址
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DdatasheetPDF页码索引
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