N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features) ● International standard packages ● Fast recovery diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High

N通道HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

N通道HiPerFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged p

PolarHV HiPerFET Power MOSFET

文件：157.56 Kbytes Page：5 Pages

Power MOSFET

文件：157.11 Kbytes Page：6 Pages