HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =80mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

HiPerFET Power MOSFETs

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HiPerRFTM Power MOSFETs

HiPerRF™ Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features ● RF capable Mosfets ● Rugged polysilicon gate cell structure ● Double metal process for low gate resistance ● Unclamped

Switch Mode MOSFETs

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

VDSS = 500 V ID25 = 55 A RDS(on)= 90 mΩ trr ≤ 250 ns Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● RF capable Mosfets ● Low gate charge and capacitances - easier to drive -faste