VDSS = 500 V

ID25 = 55 A

RDS(on)= 90 mΩ

trr ≤ 250 ns

Features

● Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

● RF capable Mosfets

● Low gate charge and capacitances

- easier to drive

-faster switching

● Low drain to tab capacitance(<30pF)

● Low RDS (on) HDMOSTM process

● Rugged polysilicon gate cell structure

● Rated for Unclamped Inductive Load Switching (UIS)

● Fast intrinsic Rectifier

Applications

● DC-DC converters

● Battery chargers

● Switched-mode and resonant-mode power supplies

● DC choppers

● AC motor control

Advantages

● Easy assembly

● Space savings

● High power density