HiPerFET™ Power MOSFET

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low Intrinsic Rg

High dV/dt, Low trr

Features

• RF capable Mosfets

• Rugged polysilicon gate cell structure

• Double metal process for low gate

resistance

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Switched-mode and resonant-mode

power supplies, >500kHz switching

• DC choppers

• Pulse generation

• Laser drivers

Advantages

• Easy to mount

• Space savings

• High power density