IXFX24N100价格

参考价格:¥88.9759

型号:IXFX24N100 品牌:IXYS 备注:这里有IXFX24N100多少钱,2025年最近7天走势,今日出价,今日竞价,IXFX24N100批发/采购报价,IXFX24N100行情走势销售排行榜,IXFX24N100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXFX24N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

IXFX24N100

N通道HiPerFET

Littelfuse

力特

IXFX24N100

HiPerFET Power MOSFETs

文件:139.35 Kbytes Page:4 Pages

IXYS

艾赛斯

IXFX24N100

HiPerFETTM Power MOSFETs

文件:137.63 Kbytes Page:4 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance

IXYS

艾赛斯

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

IXYS

艾赛斯

Advance Technical Information

HiperFET Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applica

IXYS

艾赛斯

Switch Mode MOSFETs

Littelfuse

力特

N通道HiPerFET

Littelfuse

力特

Single MOSFET Die

HiPerFET Power MOSFET Single MOSFET Die Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Batte

IXYS

艾赛斯

HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM

Features • HiPerFETTMtechnology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS I4-PAC™ high voltage package - isolated back surface - enlarged cree

IXYS

艾赛斯

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

HiPerFETTM Power MOSFETs

文件:137.63 Kbytes Page:4 Pages

IXYS

艾赛斯

IXFX24N100产品属性

  • 类型

    描述

  • 型号

    IXFX24N100

  • 功能描述

    MOSFET 24 Amps 1000V 0.39 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-16 13:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
24+
PLUS247
39197
郑重承诺只做原装进口现货
IXYS/LITTELFUSE
24+
TO-247
15800
全新原装正品现货直销
IXYS
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
IXYS
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IXYS/艾赛斯
23+
TO-247
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
IXYS
23+
TO-247
8000
只做原装现货
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
23+
TO-247
67755
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货

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