HiPerFET™ Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrisic Diode

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Avalanche rated

• Low package inductance

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor drives

• Temperature and lighting controls

Advantages

• PLUS 247TM package for clip or spring mounting

• Space savings

• High power density