HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM

Features • HiPerFETTMtechnology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS I4-PAC™ high voltage package - isolated back surface - enlarged cree

HiPerFET™ Power Mosfet in High Voltage ISOPLUS I4-PAC™

• HiPerFETTMtechnology\n   - low RDSon\n   - low gate charge for high frequency operation\n   - unclamped inductive switching (UIS) capability\n   - dv/dt ruggedness\n   - fast intrinsic reverse diode\n• ISOPLUS I4-PAC™ high voltage package\n   - isolated back surface\n   - enlarged creepage towards;

HiPerFET Power MOSFET

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HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •