Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications: • Sw

Power MOSFET

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N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications: • Sw

Power MOSFET

文件：234.64 Kbytes Page：5 Pages

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION · Switch mode power supply · DC-DC converters · AC motor control

HiPerFET Power MOSFETs

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

Fast Switching

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12A, 900V N-CHANNEL POWER MOSFET

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