HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HiPerFET Power MOSFETs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications: • Sw

HiPerFET Power MOSFETs Q Class

Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL94V-0 flammability classification Advantages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Power MOSFET

文件：234.64 Kbytes Page：5 Pages

Power MOSFET

文件：234.64 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION · Switch mode power supply · DC-DC converters · AC motor control

Fast Switching

文件：49.38 Kbytes Page：2 Pages

12A, 900V N-CHANNEL POWER MOSFET

文件：192.21 Kbytes Page：5 Pages