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IXFH12N90价格
参考价格：￥83.2534
型号：IXFH12N90 品牌：IXYS 备注：这里有IXFH12N90多少钱，2026年最近7天走势，今日出价，今日竞价，IXFH12N90批发/采购报价，IXFH12N90行情走势销售排行榜，IXFH12N90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH12N90 | HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 |   | |
IXFH12N90 | HiPerFET Power MOSFETs
| IXYS 艾赛斯 | | |
IXFH12N90 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | |
IXFH12N90 | N通道HiPerFET | LITTELFUSE 力特 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
Polar Power MOSFET HiPerFET Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications: • Sw | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs Q Class Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL94V-0 flammability classification Advantages | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N通道HiPerFET | LITTELFUSE 力特 | | ||
Power MOSFET 文件：234.64 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
Power MOSFET 文件：234.64 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
N通道HiPerFET | LITTELFUSE 力特 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION · Switch mode power supply · DC-DC converters · AC motor control | ISC 无锡固电 | | ||
Fast Switching 文件：49.38 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
12A, 900V N-CHANNEL POWER MOSFET 文件：192.21 Kbytes Page：5 Pages | UTC 友顺 | |
IXFH12N90产品属性
- 类型
描述
- 型号
IXFH12N90
- 功能描述
MOSFET 900V 12A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
14+ |
TO-247 |
24 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
23+ |
TO-3P |
6000 |
专做原装正品,假一罚百! |
|||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
22+ |
TO-3P |
5868 |
全新正品现货 有挂就有现货 |
|||
IXYS/艾赛斯 |
25+ |
TO-247 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
IXYS |
24+ |
TO-3P |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IXYS/艾赛斯 |
2450+ |
TO-247 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
25+ |
TO-247 |
880000 |
明嘉莱只做原装正品现货 |
|||
IXYZ |
24+ |
TO-247 |
3000 |
全新原装环保现货 |
IXFH12N90规格书下载地址
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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