HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 250mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

24 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

N-Channel MOSFET 500V, 24A, 0.19廓

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

24A, 500V N-CHANNEL POWER MOSFET

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Fast Switching

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24A竊?00V N-CHANNEL MOSFET

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