N-Channel MOSFET 500V, 24A, 0.19廓

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N 沟道 UniFETTM MOSFET 500V，24A，190mΩ

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 160mΩ （典型值）@ VGS = 10V, ID = 12A\n•低栅极电荷（典型值 65nC） \n•低 Crss（典型值 35pF） \n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，24 A，200 mΩ，TO-3P

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET FRFET® MOSFET 体二极管的反向恢复性能通过寿命控制方式得到加强。 其 trr 小于 100nsec 且反向 dv/dt 抗扰度为 15V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 体二极管性能具有重要作用的某些应用中可消除多余的元件，并提高系统的可靠性。 该器件系列适用于开关电源转换器应用，如功 •RDS(on) = 166mΩ （典型值）（在VGS = 10V，ID = 12A时）\n•低栅极电荷（典型值 65nC） \n•低 Crss（典型值 32pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•符合 RoHS 标准;

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 500V, 24A, 0.2廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

isc N-Channel MOSFET Transistor

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N-Channel MOSFET 500V, 24A, 0.2廓

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500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

500 Volts 24 Amps 230 mΩ Features · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance ·