HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)

HiPerFET™ Power MOSFET ISOPLUS247™ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 390mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N通道HiPerFET MOSFET

HiPerFET Power MOSFET ISOPLUS247

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N通道HiPerFET

N-Channel Enhancement Mode Fast Intrinsic Rectifier

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Single MOSFET Die

HiPerFET Power MOSFET Single MOSFET Die Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Batte

HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM

Features • HiPerFETTMtechnology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS I4-PAC™ high voltage package - isolated back surface - enlarged cree

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFETTM Power MOSFETs

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