HiPerFETTM Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 2500V~ Electrical Isolation • Avalanche Rated • Fast Intrinsic Rectifier • Lo

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N通道HiPerFET MOSFET

Power MOSFET

文件：180.52 Kbytes Page：3 Pages

Power MOSFET

文件：180.52 Kbytes Page：3 Pages

PolarHT HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savings

HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applicatio

N-Channel MOSFET Transistor

文件：338.17 Kbytes Page：2 Pages

N-Channel MOSFET Transistor

文件：338.17 Kbytes Page：2 Pages

Metal Oxide Semiconductor Field Effect Transistor

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