HiPerFET™ Power MOSFET (Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Features

• Silicon Chip on Direct-Copper Bond (DCB) Substrate

• Isolated Mounting Surface

• 2500V~ Electrical Isolation

• Avalanche Rated

• Fast Intrinsic Rectifier

• Low RDS(ON) and QG

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• DC-DC Converters

• Battery Chargers

• Switch-Mode and Resonant-Mode Power Supplies

• DC Choppers

• AC & DC Motor Controls