HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features •IXYS advanced low Qg process •Low gate charge and capacitances - easier to drive -faster switching •Unclamped Inductive Switching (UIS) rated •Low RDS (on) •Fast intrinsic diode •International st

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 48A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

N通道HiPerFET

HiPerFET Power MOSFETs Q-Class

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HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrins

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

文件：93.51 Kbytes Page：4 Pages

HiPerFET Power MOSFETs

文件：93.51 Kbytes Page：4 Pages