HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, High dv/dt

Features

• Conforms to SOT-227B outline

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Low cost

• Easy to mount

• Space savings

• High power density