HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process
UnclampedInductiveSwitching(UIS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

HiPerFETPowerMOSFETs

文件：93.51 Kbytes Page：4 Pages

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET™PowerMOSFETsQ-CLASSSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQgHighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on)

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

HiPerFETPowerMOSFETsQ-CLASS

文件：581.16 Kbytes Page：4 Pages

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

HiPerFETPowerMOSFETs

文件：93.51 Kbytes Page：4 Pages