HiPer FET Power MOSFETs Q-CLASS

HiPerFET™ Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS

HiPerFET Power MOSFETs

文件：93.51 Kbytes Page：4 Pages

HiPerFET Power MOSFETs Q-CLASS

文件：581.16 Kbytes Page：4 Pages

HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrins

HiPerFET Power MOSFETs

文件：93.51 Kbytes Page：4 Pages