HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N通道HiPerFET MOSFET

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode Features ● International standard package ● miniBLOC, with Aluminium nitride isolation ● Low RDS(ON) HDMOSTM process ● Avalanche Rated ● Low package inductance ● Fast intrinsic diode Advantages ● Low gate

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode Features ● International standard package ● miniBLOC, with Aluminium nitride isolation ● Low RDS(ON) HDMOSTM process ● Avalanche Rated ● Low package inductance ● Fast intrinsic diode Advantages ● Low gate