HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode Features ● International standard package ● miniBLOC, with Aluminium nitride isolation ● Low RDS(ON) HDMOSTM process ● Avalanche Rated ● Low package inductance ● Fast intrinsic diode Advantages ● Low gate

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

HiPerFETTM Power MOSFETs Single Die MOSFET

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