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26N90

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

IXYS

艾赛斯

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode Features ● International standard package ● miniBLOC, with Aluminium nitride isolation ● Low RDS(ON) HDMOSTM process ● Avalanche Rated ● Low package inductance ● Fast intrinsic diode Advantages ● Low gate

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Appl

IXYS

艾赛斯

HiPerFETTM Power MOSFETs Single Die MOSFET

文件:144.36 Kbytes Page:4 Pages

IXYS

艾赛斯

26N90产品属性

  • 类型

    描述

  • 型号

    26N90

  • 制造商

    IXYS

  • 制造商全称

    IXYS Corporation

  • 功能描述

    HiPerFET Power MOSFETs

更新时间:2026-5-14 15:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
26+
模块
60000
只有原装 可配单
ST
25+
模块
20000
原装
17
23+
DFN-85X6
6000
专注配单,只做原装进口现货
INFINEON
23+
QFN
7000
ST
25+
TO220
30000
原装正品公司现货,假一赔十!
ST
22+
TO220
20000
原装 品质保证
ST
25+
TO220
12700
买原装认准中赛美
ST
26+
TO-220F
86720
全新原装正品价格最实惠 假一赔百
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
ST
21+
TO220
10000
只做原装,质量保证

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