HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

HiPerFETTM Power MOSFETs

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Single MOSFET Die

HiPerFET Power MOSFET Single MOSFET Die Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Batte

HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM

Features • HiPerFETTMtechnology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS I4-PAC™ high voltage package - isolated back surface - enlarged cree