HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Ea

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

N-Channel Enhancement Mode MOSFET

文件：218.84 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：233.38 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：238.58 Kbytes Page：4 Pages