IXFH15N100价格

参考价格:¥81.7448

型号:IXFH15N100 品牌:IXYS 备注:这里有IXFH15N100多少钱,2025年最近7天走势,今日出价,今日竞价,IXFH15N100批发/采购报价,IXFH15N100行情走势销售排行榜,IXFH15N100报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXFH15N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

IXYS

艾赛斯

IXFH15N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.76Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mo

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Ea

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

ISC

无锡固电

HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • International Standard Packages • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applic

IXYS

艾赛斯

N-Channel Enhancement Mode MOSFET

文件:218.84 Kbytes Page:4 Pages

DACO

N-Channel Enhancement Mode MOSFET

文件:233.38 Kbytes Page:4 Pages

DACO

N-Channel Enhancement Mode MOSFET

文件:238.58 Kbytes Page:4 Pages

DACO

IXFH15N100产品属性

  • 类型

    描述

  • 型号

    IXFH15N100

  • 功能描述

    MOSFET 15 Amps 1000V 0.7 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-15 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS/艾赛斯
23+
TO-247
59620
原装正品 华强现货
IXYS/艾赛斯
24+
NA/
5425
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VBsemi
21+
TO247
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS/艾赛斯
25+
TO-247
32360
IXYS/艾赛斯全新特价IXFH15N100Q即刻询购立享优惠#长期有货
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
I
22+
TO-247
25000
只做原装进口现货,专注配单
IXYS
25+23+
TO-247
28827
绝对原装正品全新进口深圳现货
IXYS/艾赛斯
23+
TO-247
30000
全新原装现货,价格优势
Littelfuse/IXYS
24+
TO-247
7814
支持大陆交货,美金交易。原装现货库存。

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