N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.76Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mo

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Ea

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • International Standard Packages • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applic

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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