isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 265mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

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N通道HiPerFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-