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IXFH26N50P3价格
参考价格：￥18.7734
型号：IXFH26N50P3 品牌：IXYS 备注：这里有IXFH26N50P3多少钱，2025年最近7天走势，今日出价，今日竞价，IXFH26N50P3批发/采购报价，IXFH26N50P3行情走势销售排行榜，IXFH26N50P3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFH26N50P3 | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su | IXYS 艾赛斯 |   | |
IXFH26N50P3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 265mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | |
IXFH26N50P3产品属性
- 类型
描述
- 型号
IXFH26N50P3
- 功能描述
MOSFET Polar3 HiPerFET Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
14+ |
TO-247 |
131 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS/艾赛斯 |
21+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
IXYS |
2016+ |
TO-247 |
6523 |
只做进口原装现货!假一赔十! |
|||
IXYS/艾赛斯 |
22+ |
TO-247 |
12245 |
现货,原厂原装假一罚十! |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
12500 |
全新原装现货,假一赔十 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
25+23+ |
TO-247 |
44794 |
绝对原装正品全新进口深圳现货 |
|||
IXYS/艾赛斯 |
20+ |
TO-247 |
2800 |
绝对全新原装现货,欢迎来电查询 |
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DdatasheetPDF页码索引
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