PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeFastIntrinsicDiodeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

POLARHVHIPERFETPOWERMOSFET

DESCRIPTION TheUTC18N60usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)≤0.5Ω@VGS=10V,ID=9A *Ul

FastSwitching

•FEATURES •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

iscN-ChannelMOSFETTransistor

文件：325.33 Kbytes Page：2 Pages

18A,600VN-CHANNELPOWERMOSFET

文件：147.67 Kbytes Page：3 Pages

600VN-CHANNELPOWERMOSFET

文件：147.42 Kbytes Page：3 Pages