isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Polar HiPerFET Power MOSFET

Polar™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advant

Power MOSFET

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Power MOSFET

文件：185.65 Kbytes Page：6 Pages

1200V N-Channel Silicon Carbide Power MOSFET

Features ⚫ High blocking voltage ⚫ High speed switching with low capacitance ⚫ High operating junction temperature capability ⚫ Very fast and robust intrinsic body diode Applications ⚫ Solar inverters ⚫ UPS ⚫ High voltage DC/DC converters ⚫ Switch mode power supplies

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

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THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes Page：1 Pages