位置：首页 > IC中文资料第239页 > IXDT30N120
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXDT30N120 | HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Corporation |  |   |
IXDT30N120 | HighVoltageIGBTwithoptionalDiode 文件：89.51 Kbytes Page：4 Pages | IXYS IXYS Corporation | | |
IXDT30N120 | 封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 1200V 60A 300W TO268AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Corporation | | |
HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Corporation | | | |
HighVoltageIGBTwithoptionalDiode 文件：89.51 Kbytes Page：4 Pages | IXYS IXYS Corporation | | | |
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1200V,30ATrenchIGBT 文件：614.76 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1200V,30ATrenchIGBT 文件：614.76 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DiscreteIGBT(High-SpeedVseries)1200V/30A 文件：559.44 Kbytes Page：6 Pages | FujiFuji Electric 富士电机富士电机株式会社 |  | |
IXDT30N120产品属性
- 类型
描述
- 型号
IXDT30N120
- 功能描述
IGBT 晶体管 60 Amps 1200V 2.4 Rds
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
22+ |
TO-268AA |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
2000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
LEVELONE |
BGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
LEVELONE |
22+23+ |
BGA |
8000 |
新到现货，只做原装进口 |
|||
2023+ |
BGA |
3000 |
进口原装现货 |
||||
LEVELONE |
23+ |
BGA |
4 |
现货库存 |
|||
LEVELONE |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
LEVELONE |
24+ |
BGA |
6980 |
原装现货,可开13%税票 |
|||
121 |
|||||||
ST/意法 |
22+ |
TO-220 |
96144 |
IXDT30N120芯片相关品牌
IXDT30N120规格书下载地址
IXDT30N120参数引脚图相关
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IXDT30N120数据表相关新闻
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进口代理
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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