High Voltage IGBT with optional Diode

Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A VCE(sat) typ = 2.4 V Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● M

High Voltage IGBT with optional Diode

文件：89.51 Kbytes Page：4 Pages

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 1200V 60A 300W TO268AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage IGBT with optional Diode

Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A VCE(sat) typ = 2.4 V Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● M

High Voltage IGBT with optional Diode

文件：89.51 Kbytes Page：4 Pages

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

1200V, 30A Trench IGBT

文件：614.76 Kbytes Page：9 Pages

1200V, 30A Trench IGBT

文件：614.76 Kbytes Page：9 Pages

Discrete IGBT (High-Speed V series) 1200V / 30A

文件：559.44 Kbytes Page：6 Pages