位置：首页 > IC中文资料第239页 > IXDT30N120
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXDT30N120 | HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Integrated Circuits Division |  |   |
IXDT30N120 | HighVoltageIGBTwithoptionalDiode 文件：89.51 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
IXDT30N120 | 封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 1200V 60A 300W TO268AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Integrated Circuits Division | | | |
HighVoltageIGBTwithoptionalDiode 文件：89.51 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | | |
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1200V,30ATrenchIGBT 文件：614.76 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1200V,30ATrenchIGBT 文件：614.76 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DiscreteIGBT(High-SpeedVseries)1200V/30A 文件：559.44 Kbytes Page：6 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | |
IXDT30N120产品属性
- 类型
描述
- 型号
IXDT30N120
- 功能描述
IGBT 晶体管 60 Amps 1200V 2.4 Rds
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-220 |
96144 |
||||
LEVELONE |
00+ |
BGA |
4 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LEVELONE |
23+ |
NA |
2057 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
LEVELONE |
21+ |
BGA |
4 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
LEVELONE |
BGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INTEL |
22+ |
2300 |
绝对原装自家现货!真实库存!欢迎来电! |
||||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
|||
LEVELONE |
22+ |
BGA |
6980 |
原装现货,可开13%税票 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-268 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
LEVELONE |
22+ |
BGA |
2309 |
品牌专业分销商,可以零售 |
IXDT30N120芯片相关品牌
IXDT30N120规格书下载地址
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DdatasheetPDF页码索引
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