High Voltage IGBT with optional Diode

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● MOS inpu

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 38A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

NPT 标准 IGBT

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

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Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes Page：6 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages