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IXDH20N120价格
参考价格：￥26.1226
型号：IXDH20N120 品牌：Ixys 备注：这里有IXDH20N120多少钱，2025年最近7天走势，今日出价，今日竞价，IXDH20N120批发/采购报价，IXDH20N120行情走势销售排行榜，IXDH20N120报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXDH20N120 | High Voltage IGBT with optional Diode High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● MOS inpu | IXYS 艾赛斯 |   | |
IXDH20N120 | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 38A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | |
IXDH20N120 | NPT 标准 IGBT | Littelfuse 力特 | | |
High Voltage IGBT with optional Diode High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy paralleling ● MOS inpu | IXYS 艾赛斯 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 38A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | ||
NPT 标准 IGBT | Littelfuse 力特 | | ||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has | Intersil | | ||
General purpose inverters 文件：820.86 Kbytes Page：9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package 文件：769.26 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
1200V, 20A Trench IGBT 文件：721.12 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
1200V, 20A Trench IGBT 文件：721.12 Kbytes Page：9 Pages | Fairchild 仙童半导体 | |
IXDH20N120产品属性
- 类型
描述
- 型号
IXDH20N120
- 功能描述
IGBT 晶体管 20 Amps 1200V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
3370 |
原装现货,当天可交货,原型号开票 |
|||
IXYS |
23+ |
TO-3P |
4000 |
专做原装正品,假一罚百! |
|||
IXYS |
25+23+ |
TO-247 |
30669 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS |
918 |
TO-247 |
4500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
24+ |
TO-3P |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
24+ |
8866 |
||||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-247 |
7000 |
||||
IXYS/艾赛斯 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IXDH20N120芯片相关品牌
IXDH20N120规格书下载地址
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IXDH20N120数据表相关新闻
IXDD609YI
IXDD609YI
2023-10-12IXFB44N100P
IXFB44N100P
2023-8-3IXDI614PI
IXDI614PI
2023-7-21IXDD604SIATR
IXDD604SIATR
2022-5-27IXDD614YI
IXDD614YI，全新原装当天发货或门市自取0755-82732291.
2020-6-16IXDN402SI-16全新原装现货
可立即发货
2019-9-24
DdatasheetPDF页码索引
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