High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ● High Blocking Voltage ● Anti-Parallel Diode ● International Standard Packages ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gener

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 3000V 50A 250W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

Features ● High Voltage Package ● High Blocking Voltage ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Generators ● Ca

封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：卷带（TR） 描述：IGBT 3000V 50A 250W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ● High Blocking Voltage ● Anti-Parallel Diode ● International Standard Packages ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gener

High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Frequency Operation Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Suppl